Critical Behaviour near the Mott Transition in a Two-Band Hubbard Model
Yasuo Ohashi, Yoshiaki Ōno
Abstract
The Mott metal-insulator transition in the two-band Hubbard model in infinite dimensions is studied by using the linearized dynamical mean-field theory. The discontinuity in the chemical potential for the change from hole to electron doping is calculated analytically as a function of the on-site Coulomb interaction U, and the charge-transfer energy Δ between the d- and p-orbitals, transfer integrals tpd, tpp, tdd between p-d, p-p and d-d sites respectively. The critical behaviour of the quasiparticle weight is also obtained analytically.
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