Microwave Rectification at the Boundary between Two-Dimensional Electron Systems
I. Hoxha, S. A. Vitkalov, N. A. Zimbovskaya, M. P. Sarachik, T. M. Klapwijk
Abstract
Rectification of microwave radiation (20-40 GHz) by a line boundary between two two-dimensional metals on a silicon surface was observed and investigated at different temperatures, in-plane magnetic fields and microwave powers. The rectified voltage Vdc is generated whenever the electron densities n1,2 of the two metals are different, changing polarity at n1 ≈ n2. Very strong nonlinear response is found when one of the two 2D metals is close to the electron density corresponding to the reported magnetic instability in this system.
Create a lesson
Related papers
Hall-Density Collapse as Direct Evidence for Percolative Conduction Onset in Monolayer MoS2 Transistors
R. V. Upadya, M. Introna, X. Wu et al.
Spin swapping mediated by spin-orbital textures in centrosymmetric multiorbital materials
Chengyuan Cai, Hanchen Wang, Rui-Chun Xiao et al.
Electrostatics of Chern junctions in a magnetic field
Robin Durand, Pascal Simon, Ion Garate
Spin Simulators based on Exciton-Polariton Waveguide Networks
Kevin Dini, Simone Zanotti, Timothy C. H. Liew
The quantized Hall effect knows which way the current flows: mirror covariance and rectification in a laterally asymmetric Hall bar
A. Siddiki
Floquet-Volkov spin polarization in spin-degenerate Antiferromagnets
Jiyang Fan, Dinghui Wang, Tongshuai Zhu