Microwave Rectification at the Boundary between Two-Dimensional Electron Systems
Abstract
Rectification of microwave radiation (20-40 GHz) by a line boundary between two two-dimensional metals on a silicon surface was observed and investigated at different temperatures, in-plane magnetic fields and microwave powers. The rectified voltage Vdc is generated whenever the electron densities n1,2 of the two metals are different, changing polarity at n1 ≈ n2. Very strong nonlinear response is found when one of the two 2D metals is close to the electron density corresponding to the reported magnetic instability in this system.
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