Flat-band excitonic states in Kagome lattice on semiconductor surface
H. Ishii, T. Nakayama, J. Inoue
Abstract
Excitonic properties in the Kagome lattice system, which is produced by quantum wires on semiconductor surfaces, are investigated by using the exact diagonalization of a tight binding model. It is shown that due to the existence of flat bands the binding energy of exciton becomes remarkably large in the two-dimensional Kagome lattice compared to that in one-dimensional lattice, and the exciton Bohr radius is quite small as large as a lattice constant. We also discuss the magnetic field effects on the exciton binding energy and the stability of exciton against the creation of charged exciton and biexciton.
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