Ten-nanometer surface intrusions in room temperature silicon
Shu-Han Lin, Iris Mack, Noom Pongkrapan, P. Fraundorf
Abstract
Defects ~10 nm in size, with number densities ~1010 cm-2, form spontaneously beneath ion-milled, etched, or HF-dipped silicon surfaces examined in our Ti-ion getter-pumped transmission electron microscope (TEM) after exposure to air. They appear as weakly-strained non-crystalline intrusions into silicon bulk, that show up best in the TEM under conditions of strong edge or bend contrast. If ambient air exposure is <10 minutes, defect nucleation and growth can be monitored in situ. Possible mechanisms of formation are discussed.
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