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Observation of large anisotropy in c-axis oriented thin films of MgB2 prepared by an in situ pulsed laser deposition process

S. R. Shinde, S. B. Ogale, A. Biswas, R. L. Greene, T. Venkatesan

cond-mat.supr-conarXiv:cond-mat/0110541

Abstract

A large anisotropy in the upper critical field (HC2) is observed for MgB2 films grown in situ by a pulsed laser deposition process involving growth and annealing of Mg and B multilayers. Measurements of resistivity as a function of temperature and magnetic field yield the estimated zero temperature values of HC2 in the range 100 to 130 T and about 10 T, for the field in ab plane and along c axis, respectively, depending on the criterion chosen for the transition temperature. The corresponding anisotropy parameter is thus in the range 9 to 13. The estimated coherence length in ab plane is about 50 Å, whereas that in the c direction is much smaller (≈ 5 Å). No significant magnetoresistance is observed in the normal state.

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