Influence of quantum confinement on the ferromagnetism of (Ga,Mn)As diluted magnetic semiconductor
Abstract
We investigate the effect of quantum confinement on the ferromagnetism of diluted magnetic semiconductor Ga1-xMnxAs using a combination of tight-binding and density functional methods. We observe strong majority-spin Mn d-As p hybridization, as well as half metallic behavior, down to sizes as small as 20 in diameter. Below this critical size, the doped holes are self-trapped by the Mn-sites, signalling both valence and electronic transitions. Our results imply that magnetically doped III-V nanoparticles will provide a medium for manipulating the electronic structure of dilute magnetic semiconductors while conserving the ferromagnetic properties and even enhancing it in certain size regime.
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