A model for spin-polarized transport in perovskite manganite bi-crystal grain boundaries
Abstract
We have studied the temperature dependence of low-field magnetoresistance and current-voltage characteristics of a low-angle bi-crystal grain boundary junction in perovskite manganite La2/3Sr1/3MnO3 thin film. By gradually trimming the junction we have been able to reveal the non-linear behavior of the latter. With the use of the relation MGB MbulkMR* we have extracted the grain boundary magnetization. Further, we demonstrate that the built-in potential barrier of the grain boundary can be modelled by Vbi Mbulk2 - MGB2. Thus our model connects the magnetoresistance with the potential barrier at the grain boundary region. The results indicate that the band-bending at the grain boundary interface has a magnetic origin.
Turn this paper into a full lesson
ArcXiv compiles a staged curriculum from this paper: 8-12 lessons across beginner → advanced, synthesised section guides, visuals, flashcards, a quiz, exercises, and on-demand deep dives per section. Grounded in the abstract, never invented.