Kinetic exchange vs. room temperature ferromagnetism in diluted magnetic semiconductors
J. Blinowski, P. Kacman, T. Dietl
Abstract
Guided by the internal-reference rule and the known band offsets in III-V and II-VI diluted magnetic semiconductors, we discuss the feasibility of obtaining p-type conductivity, required for the carrier-induced ferromagnetism, as well as the cases for which the doping by shallow impurities may lead to the ferromagnetism driven by the double exchange. We consider the dependence of kinetic exchange on the p-d hybridization, on the electronic configurations of the magnetic ions, and on the energies of the charge transfer between the valence band of host materials and the magnetic ions. In the case of Mn-based II-VI compounds, the doping by acceptors is necessary for the hole-induced ferromagnetism. The latter is, however, possible without any doping for some of Mn-, Fe- or Co-based III-V magnetic semiconductors. In nitrides with Fe or Co carrier-induced ferromagnetism with TC>300K is expected in the presence of acceptor doping.
Create a lesson
Related papers
A Gaussian process coarse-grained potential for Na-montmorillonite
Yalda Pedram, Yaoting Zhang, Laurent Brochard et al.
First-principles theory of phonon renormalization from nonlinear electron-phonon interactions
Florian Kluibenschedl, Matthew Houtput, Jacques Tempere et al.
Spin-Lattice Dynamics and Interactions in Magnonic Spinels
Hari Paudyal, Yuri Suzuki, Michael E. Flatté et al.
Magnon-Phonon Dynamics in Multidimensional Antiferromagnetic Oxides
Yogendra Limbu, Michael E. Flatté, Durga Paudyal
Strain-Induced Metal-to-Insulator Transition in Antiferromagnetic SrCrO3 Thin Films
S. Jöhr, A. Carta, J. Moreno et al.
Tuning the Coercive Field in Ferroelectric Hf0.5Zr0.5O2-Al2O3 Heterostructures via Interfacial Charge Dynamics
Marshall B. Frye, Chanyoung Kim, Jeong-Woo Sun et al.