Ferromagnetic semiconductor (In,Ga,Mn)As with Curie temperature above 100 K
T. Slupinski, H. Munekata, A. Oiwa
Abstract
We have grown (InyGa1-y)1-xMnxAs ferromagnetic semiconductor layers with Mn composition x up to 0.13 on InP substrates by molecular beam epitaxy. Near the lattice-matched composition, i.e., y ~ 0.53, the Curie temperature increases linearly with the ferromagnetically effective Mn composition xeff, following the empirical equation TC=1300xeff. We obtained Curie temperatures above 100 K when x is relatively high (x>0.1; xeff>0.08) and the hole concentration is in the order of 1019 cm-3.
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