Anisotropic Electrical Spin Injection in Ferromagnetic Semiconductor Heterostructures
D. K. Young, E. Johnston-Halperin, D. D. Awschalom, Y. Ohno, H. Ohno
Abstract
A fourteen-fold anisotropy in the spin transport efficiency parallel and perpendicular to the charge transport is observed in a vertically-biased (Ga,Mn)As-based spin-polarized light emitting diode. The spin polarization is determined by measuring the polarization of electroluminescence from an (In,Ga)As quantum well placed a distance d (20 to 420 nm) below the p-type ferromagnetic (Ga,Mn)As contact. In addition, a monotonic increase from 0.5 to 7% in the polarization is measured as d decreases for collection parallel to the growth direction, while the in-plane polarization from the perpendicular direction (~0.5%) remains unchanged.
Create a lesson
Related papers
Coherent and ultra-low-power EDSR with a flopping-mode spin qubit in germanium
Alexei Orekhov, Wonjin Jang, Pan Zhang et al.
Disorder-induced modulation of the nonlinear Hall effect in Weyl semimetals
Juan A. Cañas, Daniel A. Bonilla, A. Martín-Ruiz
Coplanar Lateral Gating MoS2 on SrTiO3: A Unified Platform for Classical and Quantum Devices
Prasad Muragesh, Manav Murali, Venkatesha Modur Ramachandra et al.
Predictive Structure to Thermal Conductivity Modeling Framework for BEOL Interconnect Stacks in Advanced Technology Nodes Enabled by Extensive Layer Resolved Thermal Measurements
Zifeng Huang, Yiyang Sun, Tianyu Jia et al.
Plasmons in twisted bilayer graphene across dispersive and flat bands
Antonio Palamara, Michele Pisarra, Antonello Sindona
Highly uniform first-electron position in qubit arrays fabricated on dedicated QSOI(R) 300mm commercial platform
Johan Pelloux-Prayer, Elise Prin, Giselle A. Elbaz et al.