Degradation of LaMnO3-y surface layer in LaMnO3-y/ metal interface
A. Plecenik, K. Frohlich, J. P. Espinos, J. P. Holgado, A. Halabica, M. Pripko, A. Gilabert
Abstract
We report electrical measurements showing the degradation processes of LaMnO3-y (LaMnO) in LaMnO/normal metal interface in both point contact and planar-type junctions. Immediately after the preparation of the interface, the degradation process was followed by measuring the evolution of the junction resistance versus time. This process is characterized by the appearance of a second maximum in the resistance vs. temperature (R-T) dependence at temperatures lower than the Curie temperature Tc, at which the metal-insulator transition occurs in the bulk. These effects are explained in terms of the formation of a depleted interface layer in LaMnO caused by an out-diffusion of oxygen from the manganite surface to the normal metal. This assumption is confirmed by XPS measurement. Similar results on LaSrMnO3-y interfaces are also obtained.
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