Parabolic negative magnetoresistance in p-Ge/Ge1-xSix heterostructures
Yu. G. Arapov, G. I. Harus, O. A. Kuznetsov, V. N. Neverov, N. G. Shelushinina
Abstract
Quantum corrections to the conductivity due to the weak localization (WL) and the disorder-modified electron-electron interaction (EEI) are investigated for the high-mobility multilayer p-Ge/Ge1-xSix heterostructures at T = (0.1 - 20.0)K in magnetic field B up to 1.5T. Negative magnetoresistance with logarithmic dependence on T and linear in B2 is observed for B >= 0.1T. Such a behavior is attributed to the interplay of the classical cyclotron motion and the EEI effect. The Hartree part of the interaction constant is estimated (F/sigma = 0.44) and the WL and EEI contributions to the total quantum correction /Delta /sigma at B = 0 are separated (/Delta /sigmaWL ~ 0.3/Delta /sigma; /Delta /sigmaEEI ~ 0.7/Delta /sigma).
Create a lesson
Related papers
The Stone-Wales trefoil: a new topological defect in graphene
M. V. Kondrin, Y. B. Lebed, V. V. Brazhkin
Short-Range Vector Spin Glasses: Parisi Hierarchies and Real-Space Ultrametricity
Akash Vijay, Jaewon Kim, Jong Yeon Lee
Lyapunov spectrum of random neural networks
David G. Clark
Revealing more on complex energy landscapes by passing less local information: Cavity approach with trust region in non-convex optimization problems
Zhiqi Xu, Chi Ho Yeung
Predicting activation-barrier and plasticity-onset statistics in a model of glasses
Makoto Suda, Edan Lerner, Eran Bouchbinder
Classifications in modular restricted Boltzmann machines
Elena Agliari, Andrea Lepre, Edoardo Roscani