Enhancement of spontaneous emission in a quantum well by resonant surface plasmon coupling
Arup Neogi, Chang-Won Lee, Henry O. Everitt, Takamasa Kuroda, Atsushi Tackeuchi, Eli Yablonovitch
Abstract
Using time-resolved photoluminescence measurements, the recombination rate in an In0.18Ga0.82N/GaN quantum well (QW) is shown to be greatly enhanced when spontaneous emission is resonantly coupled to a silver surface plasmon. The rate of enhanced spontaneous emission into the surface plasmon was as much as 92 times faster than normal QW spontaneous emission. A calculation, based on Fermi's golden rule, reveals the enhancement is very sensitive to silver thickness and indicates even greater enhancements are possible for QWs placed closer to the surface metal coating.
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