Atomic Scale Memory at a Silicon Surface
R. Bennewitz, J. N. Crain, A. Kirakosian, J. -L. Lin, J. L. McChesney, D. Y. Petrovykh, F. J. Himpsel
Abstract
The limits of pushing storage density to the atomic scale are explored with a memory that stores a bit by the presence or absence of one silicon atom. These atoms are positioned at lattice sites along self-assembled tracks with a pitch of 5 atom rows. The writing process involves removal of Si atoms with the tip of a scanning tunneling microscope. The memory can be reformatted by controlled deposition of silicon. The constraints on speed and reliability are compared with data storage in magnetic hard disks and DNA.
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