Concentration of Charge Carriers and Anomalous Gap Parameter in the Normal State of High-Tc Superconductors
Abstract
Fermi-Dirac statistics has been utilized by introducing the average ionization energy (EI) as an additional anomalous energy gap in order to derive the two-dimensional concentration of charge carriers and the phenomenological resistivity model for the superconducting polycrystalline materials. The best fitted values of EI and the charge carriers' concentration ranges in the vicinity of 4 to 9 meV and 1016 m-2 respectively for the superconducting single crystal samples and polycrystalline compounds synthesized with various compositions via solid-state reactions. The phenomenological resistivity model is further redefined here based on the gapless nature of charge-carriers' dynamics within the Cu-O2 planes that corresponds to anomalous Fermi liquid behavior, which is in accordance with the nested Fermi liquid theory.
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