Evolution of the resistivity anisotropy in Bi2Sr2-xLaxCuO6+δ single crystals for a wide range of hole doping
Abstract
To elucidate how the temperature dependence of the resistivity anisotropy of the cuprate superconductors changes with hole doping, both the in-plane and the out-of-plane resistivities (ab and c) are measured in a series of high-quality Bi2Sr2-xLaxCuO6+δ (BSLCO) single crystals for a wide range of x (x = 0.23 - 1.02), which corresponds to the hole doping per Cu, p, of 0.03 - 0.18. The anisotropy ratio, c/ab, shows a systematic increase with decreasing p at moderate temperatures, except for the most underdoped composition where the localization effect enhances ab and thus lowers c/ab. The exact p dependence of c/ab at a fixed temperature is found to be quite peculiar, which is discussed to be due to the effect of the pseudogap that causes c/ab to be increasingly more enhanced as p is reduced. The pseudogap also causes a rapid growth of c/ab with decreasing temperature, and, as a result, the c/ab value almost reaches 106 in underdoped samples just above Tc. Furthermore, it is found that the temperature dependence of c of underdoped samples show two distinct temperature regions in the pseudogap phase, which suggests that the divergence of c below the pseudogap temperature is governed by two different mechanisms.
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