Properties of Ferromagnetic Ga1-xMnxN Films Grown by Ammonia-MBE
Saki Sonoda, Hidenobu Hori, Yoshiyuki Yamamoto, Takahiko Sasaki, Masugu Sato, Saburo Shimizu, Ken-ichi Suga, Koichi Kindo
Abstract
Using ammonia as nitrogen source for molecular beam epitaxy, the GaN-based diluted magnetic semiconductor Ga1-xMnxN is successfully grown with Mn concentration up to x~6.8% and with p-type conductivity. The films have wurtzite structure with substitutional Mn on Ga site in GaN. Magnetization measurements revealed that Ga1-xMnxN is ferromagnetic at temperatures higher than room temperature. The ferromagnetic-paramagnetic transition temperature, Tc, depends on the Mn concentration of the film. At low temperatures, the magnetization increases with increasing of magnetic field, implying that a paramagnetic-like phase coexists with ferromagnetic one. Possible explanations will be proposed for the coexistence of two magnetic phases in the grown films.
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