Slave-Boson Three-Band Model with O-O Hopping for High-Tc Superconductors
Ivana Mrkonjic, Slaven Barisic
Abstract
Slave boson mean-field approximation is carried out analytically for weakly doped CuO2 conduction planes, characterized by Cu-O charge transfer energy Δpd, Cu-O hopping t0, O-O hopping t' and repulsion Ud between holes on Cu site taken as infinite. At zero doping δ, finite negative t',|t'|<t0/2, expands the range of stability of the covalent, conducting state on the expense of the insulating state which, however, remains stable at larger Δpd. For sufficiently large Δpd the renormalized charge transfer energy saturates at 4|t'| instead of decreasing to zero, as at t'=0 case. In contrast to t', finite δsuppresses the insulating state nearly symmetrically with respect to the sign of δ. The regime with charge transfer energy renormalized close to 4|t'| fits remarkably well the ARPES spectra of Bi2212 and LSCO, and, in the latter case, explains the observed strong doping dependence of the Cu-O hopping.
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