Low-temperature spin relaxation in n-type GaAs
R. I. Dzhioev, K. V. Kavokin, V. L. Korenev, M. V. Lazarev, B. Ya. Meltser, M. N. Stepanova, B. P. Zakharchenya, D. Gammon, D. S. Katzer
Abstract
Low-temperature electron spin relaxation is studied by the optical orientation method in bulk n-GaAs with donor concentrations from 1014 cm-3 to 5x1017 cm-3. A peculiarity related to the metal-to-insulator transition (MIT) is observed in the dependence of the spin lifetime on doping near nD = 2x1016 cm-3. In the metallic phase, spin relaxation is governed by the Dyakonov-Perel mechanism, while in the insulator phase it is due to anisotropic exchange interaction and hyperfine interaction
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