Magnetic-field dependence of electron spin relaxation in n-type semiconductors
Franz X. Bronold, Ivar Martin, Avadh Saxena, Darryl L. Smith
Abstract
We present a theoretical investigation of the magnetic field dependence of the longitudinal (T1) and transverse (T2) spin relaxation times of conduction band electrons in n-type III-V semiconductors. In particular, we find that the interplay between the Dyakonov-Perel process and an additional spin relaxation channel, which originates from the electron wave vector dependence of the electron g-factor, yields a maximal T2 at a finite magnetic field. We compare our results with existing experimental data on n-type GaAs and make specific additional predictions for the magnetic field dependence of electron spin lifetimes.
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