Experimental Study of Pressure Influence on Tunnel Transport into 2DEG

Abstract

We present the concept and the results of pilot measurements of tunneling in a system {Al/$δ_{Si}$-GaAs} under pressure up to 2 GPa at 4.2 K. The obtained results may indicate the following: the barrier height for {Al/$δ$-GaAs} equals to 0.86 eV at P=0 and its pressure coefficient is $3 meV/kbar$; charged impurity density in the delta-layer starts to drop from $4.5\times 10^{12} cm^{-2}$ down to $3.8\times 10^{12} cm^{-2}$ at about 1.5 GPa; metal-insulator transition may occur in 2DEG at about 2 GPa.