Formation of InAs Self-Assembled Quantum Rings on InP
T. Raz, D. Ritter, G. Bahir
Abstract
Shape transformations of partially capped self-assembled InAs quantum dots grown on InP are studied. Atomic force microscopy images show large anisotropic redistribution of the island material after coverage by a 1 nm thick InP layer. The anisotropic material redistribution occurs within a few minutes and leads to a change from lens-like to elongated ring-like islands. The shape transformation is not accompanied by dot material compositional change. The formation of InAs/InP quantum rings disagrees with a previous model of InAs/GaAs ring formation that assumes that the driving force for the dot to ring transformation is the difference in surface diffusion velocity of indium and gallium atoms.
Create a lesson
Related papers
Knots in Condensed Matters
Y. M. Cho
Bouchaud's model exhibits two different aging regimes in dimension one
Gerard Ben Arous, Jiri Cerny
Periodic diffraction patterns for 1D quasicrystals
Pawel Buczek, Lorenzo Sadun, Janusz Wolny
Adiabatic association of ultracold molecules via magnetic field tunable interactions
Krzysztof Goral, Thorsten Koehler, Simon A. Gardiner et al.
High-Temperature Atomic Superfluidity in Lattice Boson-Fermion Mixtures
F. Illuminati, A. Albus
Constructive Methods of Invariant Manifolds for Kinetic Problems
A. N. Gorban, I. V. Karlin, A. Yu. Zinovyev