On Effective Electron Mass of Silicon MOSFET at Low Electron Density
Abstract
The trial wave function method developed in Ref.s gutz,brink for the case of narrow s-band in a perfect crystal is adapted for calculation of the density dependence of the effective mass and the Lande factor in a dilute two-dimensional electron system. We find that the effective mass has a tendency to diverge at a certain critical concentration, whereas the g factor remains finite.
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