Photoluminescence investigations of 2D hole Landau levels in p-type single AlxGa1-xAs/GaAs heterostructures
Abstract
We study the energy structure of two-dimensional holes in p-type single Al1-xGaxAs/GaAs heterojunctions under a perpendicular magnetic field. Photoluminescence measurments with low densities of excitation power reveal rich spectra containing both free and bound-carrier transitions. The experimental results are compared with energies of valence-subband Landau levels calculated using a new numerical procedure and a good agreement is achieved. Additional lines observed in the energy range of free-carrier recombinations are attributed to excitonic transitions. We also consider the role of many-body effects in photoluminescence spectra.
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