Electronic and Optical Properties of ZnIn2Te4
Biplab Ganguli, Kamal Krishna Saha, Tanusri Saha-Dasgupta, Abhijit Mookerjee, A. K. Bhattacharya
Abstract
Band structure and optical properties of defect- Chalcopyrite type semiconductor ZnIn2Te4 have been studied by TB-LMTO first principle technique. The optical absorption calculation suggest that ZnIn2Te4 is a direct-gap semiconductor having a band gap of 1.40 eV., which confirms the experimentally measured value. The calculated complex dielectric-function ε(E) = ε1(E) + iε2(E) reveal distinct structures at energies of the critical points in the Brillouin zone.
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