Nanoscale self-affine surface smoothing by ion bombardment
D. K. Goswami, B. N. Dev
Abstract
Topography of silicon surfaces irradiated by a 2 MeV Si+ ion beam at normal incidence and ion fluences in the range 1015-1016 ions/cm2 has been investigated using scanning tunneling microscopy. At length scales below ~50 nm, surface smoothing is observed; the smoothing is more prominent at smaller length scales. The smoothed surface is self-affine with a scaling exponent α=0.530.02.
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