Spin-dependent tunnelling through a symmetric barrier
V. I. Perel', S. A. Tarasenko, I. N. Yassievich, S. D. Ganichev, V. V. Bel'kov, W. Prettl
Abstract
The problem of electron tunnelling through a symmetric semiconductor barrier based on zinc-blende-structure material is studied. The k3 Dresselhaus terms in the effective Hamiltonian of bulk semiconductor of the barrier are shown to result in a dependence of the tunnelling transmission on the spin orientation. The difference of the transmission probabilities for opposite spin orientations can achieve several percents for the reasonable width of the barriers.
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