Spin-wave scattering at low temperatures in manganite films
Abstract
The temperature T and magnetic field H dependence of the resistivity has been measured for La0.8-ySr0.2MnO3 (y=0 and 0.128) films grown on (100) SrTiO3 substrates. The low-temperature in the ferromagnetic metallic region follows well (H,T)= 0(H)+A(H)ωs/ ( ωs/2kBT)+B(H)T7/2 with 0 being the residual resistivity. We attribute the second and third term to small-polaron and spin-wave scattering, respectively. Our analysis based on these scattering mechanisms also gives the observed difference between the metal-insulator transition temperatures of the films studied. Transport measurements in applied magnetic field further indicate that spin-wave scattering is a key transport mechanism at low temperatures.
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