In(1-x)Mn(x)Sb - a new narrow gap ferromagnetic semiconductor
Abstract
A narrow-gap ferromagnetic In(1-x)Mn(x)Sb semiconductor alloy was successfully grown by low-temperature molecular beam epitaxy on CdTe/GaAs hybrid substrates. Ferromagnetic order in In(1-x)Mn(x)Sb was unambiguously established by the observation of clear hysteresis loops both in direct magnetization measurements and in the anomalous Hall effect, with Curie temperatures TC ranging up to 8.5 K. The observed values of TC agree well with the existing models of carrier-induced ferromagnetism.
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