Precision determination of band offsets in strained InGaAs/GaAs quantum wells by C-V-profiling and Schroedinger-Poisson self-consistent simulation
Abstract
The results of measurements and numerical simulation of charge carrier distribution and energy states in strained quantum wells InxGa1-xAs/GaAs (0.06 < x < 0.29) by C-V-profiling are presented. Precise values of conduction band offsets for these pseudomorphic QWs have been obtained by means of self-consistent solution of Schroedinger and Poisson equations and following fitting to experimental data. For the conduction band offsets in strained InxGa1-xAs/GaAs - QWs the expression DEC(x) = 0.814x - 0.21x2 has been obtained.
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