Electron interaction with domain walls in antiferromagnetically coupled multilayers
F. G. Aliev, R. Schad, A. Volodin, K. Temst, C. Van Haesendonck, Y. Bruynseraede, I. Vavra, V. K. Dugaev, R. Villar
Abstract
For antiferromagnetically coupled Fe/Cr multilayers the low field contribution to the resistivity, which is caused by the domain walls, is strongly enhanced at low temperatures. The low temperature resistivity varies according to a power law with the exponent about 0.7 to 1. This behavior can not be explained assuming ballistic electron transport through the domain walls. It is necessary to invoke the suppression of anti-localization effects (positive quantum correction to conductivity) by the nonuniform gauge fields caused by the domain walls.
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