Spin polarization and metallic behavior of a silicon two-dimensional electron system
Tohru Okamoto, Mitsuaki Ooya, Kunio Hosoya, Shinji Kawaji
Abstract
We have studied the magnetic and transport properties of an ultra-low-resistivity two-dimensional electron system in a Si/SiGe quantum well. The spin polarization increases linearly with the in-plane magnetic field and the enhancement of the spin susceptibility is consistent with that in Si-MOS structures. Temperature dependence of resistivity remains metallic even in strong magnetic fields where the spin degree of freedom is frozen out. We also found a magnetoresistance anisotropy with respect to an angle between the current and the in-plane magnetic field.
Create a lesson
Related papers
Parametric Glassiness in Graphene-based Electronic Lévy Glass
Caue N. da Silva, Diego B. Fonseca, Adauto J. F. de Souza et al.
Giant geometric nonlinear transport in inhomogeneously strained Bi2Se3 single crystalline slabs
Igor Veremchuk, Pavlo Makushko, Anita Guarino et al.
Controlling the Atomic Reconstruction in Twisted MoSe2/WSe2 with a Monolayer hBN Spacer
Johannes Figueiredo, Kaiyuan Chen, Aubrey Penn et al.
Pulse-by-pulse imaging of reversible, collective reshaping in laser-excited gold nanorods
Mees Dieperink, Loriane Monin, Ichiro Ohnishi et al.
Atomic Edge Resonators Flatten Phonon Bands in Biphenylene Nanoribbons
V. L. Katkov, N. M. Chtchelkatchev, V. A. Osipov
Theory of exciton-exciton interactions in crystalline systems
L. Maisel Licerán, H. T. C. Stoof