Phase measurements using Two-Channel Fano Interference in a Semiconductor Quantum Dot
C. Fuhner, U. F. Keyser, R. J. Haug, D. Reuter, A. D. Wieck
Abstract
We investigate a lateral semiconductor quantum dot with a large number of electrons in the semi-open Fano regime. In transport measurements we observe three stable series of Fano resonances with similar lineshapes. We present a simple model explaining the temperature and VSD dependence of the resonances. The Fano regime allows to investigate phase and coherence of the electronic wave function and astonishingly, we find no signs of decoherence in our system.
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