Atomically precise placement of single dopants in Si
S. R. Schofield, N. J. Curson, M. Y. Simmons, F. J. Ruess, T. Hallam, L. Oberbeck, R. G. Clark
Abstract
We demonstrate the controlled incorporation of P dopant atoms in Si (001) presenting a new path toward the creation of atomic-scale electronic devices. We present a detailed study of the interaction of PH3 with Si (001) and show that it is possible to thermally incorporate P atoms into Si (001) below the H desorption temperature. Control over the precise spatial location at which P atoms are incorporated was achieved using STM H-lithography. We demonstrate the positioning of single P atoms in Si with ~ 1 nm accuracy and the creation of nanometer wide lines of incorporated P atoms.
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