Observation of Mott Transition in VO2 Based Transistors
Hyun-Tak Kim, B. G. Chae, D. H. Youn, S. L. Maeng, K. Y. Kang
Abstract
An abrupt Mott metal-insulator transition (MIT) rather than the continuous Hubbard MIT near a critical on-site Coulomb energy U/Uc=1 is observed for the first time in VO2, a strongly correlated material, by inducing holes of about 0.018% into the conduction band. As a result, a discontinuous jump of the density of states on the Fermi surface is observed and inhomogeneity inevitably occurs. The gate effect in fabricated transistors is clear evidence that the abrupt MIT is induced by the excitation of holes.
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