Electronic properties of metal induced gap states at insulator/metal interfaces -- dependence on the alkali halide and the possibility of excitonic mechanism of superconductivity
Ryotaro Arita, Yoshiaki Tanida, Kazuhiko Kuroki, Hideo Aoki
Abstract
Motivated from the experimental observation of metal induced gap states (MIGS) at insulator/metal interfaces by Kiguchi et al. [Phys. Rev. Lett. 90, 196803 (2003)], we have theoretically investigated the electronic properties of MIGS at interfaces between various alkali halides and a metal represented by a jellium with the first-principles density functional method. We have found that, on top of the usual evanescent state, MIGS generally have a long tail on halogen sites with a pz-like character, whose penetration depth (λ) is as large as half the lattice constant of bulk alkali halides. This implies that λ, while little dependent on the carrier density in the jellium, is dominated by the lattice constant (hence by energy gap) of the alkali halide, where λ LiF < λ LiCl < λ LiI. We also propose a possibility of the MIGS working favorably for the exciton-mediated superconductivity.
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