Circular Photogalvanic Effect at Inter-Band Excitation in Semiconductor Quantum Wells
V. V. Bel'kov, S. D. Ganichev, Petra Schneider, C. Back, M. Oestereich, J. Rudolph, D. Haegele, L. E. Golub, W. Wegscheider, W. Prettl
Abstract
We observed a circular photogalvanic effect (CPGE) in GaAs quantum wells at inter-band excitation. The spectral dependence of the CPGE is measured together with that of the polarization degree of the time resolved photoluminescence. A theoretical model takes into account spin splitting of conduction and valence bands.
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