Direct observation by resonant tunneling of the B^+ level in a delta-doped silicon barrier

Abstract

We observe a resonance in the conductance of silicon tunneling devices with a delta-doped barrier. The position of the resonance indicates that it arises from tunneling through the B^+ state of the boron atoms of the delta-layer. Since the emitter Fermi level in our devices is a field-independent reference energy, we are able to directly observe the diamagnetic shift of the B^+ level. This is contrary to the situation in magneto-optical spectroscopy, where the shift is absorbed in the measured ionization energy.