External Control of Magnetism in Semiconductors at High Temperature (~100K)
Ahsan M. Nazmul, S. Kobayashi, S. Sugahara, M. Tanaka
Abstract
We demonstrate the electrical and optical control of ferromagnetism in semiconductor heterostructures at high temperatures of 100-117 K. The heterostructures consist of Mn delta-doped GaAs and p-type AlGaAs, where the overlap of the hole wavefunction with the Mn delta-doping profile leads to high ferromagnetic transition temperature TC of over 100 K (max. 172 K). We are able to isothermally change the paramagnetic state to the ferromagnetic state and vice versa, by applying a gate electric-field or by light irradiation. The large modulation of TC (DTC ~15 K) at high temperatures (> ~100 K) demonstrated here may pave the way to functional device applications compatible with the present semiconductor technology.
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