Demonstration of a 1/4 cycle phase shift in the radiation-induced oscillatory-magnetoresistance in GaAs/AlGaAs devices
R. G. Mani, J. H. Smet, K. von Klitzing, V. Narayanamurti, W. B. Johnson, V. Umansky
Abstract
We examine the phase and the period of the radiation-induced oscillatory-magnetoresistance in GaAs/AlGaAs devices utilizing in-situ magnetic field calibration by Electron Spin Resonance of DiPhenyl-Picryl-Hydrazal. The results confirm a f-independent 1/4 cycle phase shift with respect to the hf = jωc condition for j ≥ 1, and they also suggest a small (≈ 2%) reduction in the effective mass ratio, m*/m, with respect to the standard value for GaAs/AlGaAs devices.
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