Anisotropic Metal-Insulator Transition in Epitaxial Thin Films
I. B. Altfeder, X. Liang, D. M. Chen, V. Narayanamurti
Abstract
Quantum wells made of simple polyvalent metals represent a novel family of doped 2D Mott-Hubbard insulators. As scanning tunneling microscopy experiments show, these systems exhibit an anisotropic form of metal-insulator transition. Their elementary excitations possess coherent wave-like properties along the normal axis, and show an incoherent behavior in-plane. The development of such an anisotropic coherence is most likely related to Coulomb interaction between localized and delocalized thin film electronic states - 2D Kondo screening.
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