Alloy effects in GaInN/GaN heterostructures
Duc Phuong Nguyen, Nicolas Regnault, Robson Ferreira, Gerald Bastard
Abstract
We show that the large band offsets between GaN and InN and the heavy carrier effective masses preclude the use of the Virtual Crystal Approximation to describe the electronic structure of Ga(1-x)In(x)N/GaN heterostructures while this approximation works very well for the Ga(1-x)In(x)As/GaAs heterostructures.
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