Resistivity model for both paramagnetic and ferromagnetic phases
Abstract
The resistivity, ρ as a function of temperature and ionization energy (doping) and magnetization respectively is derived with further confinements from spin-disorder scattering. The computed Tcrossover below TC and carrier density in Ga1-xMnxAs system are 8-12 K and 1019 cm-3, remarkably identical with the experimental values of 10-12 K and 1018-1020 cm-3 respectively.
0
Turn this paper into a full lesson
ArcXiv compiles a staged curriculum from this paper: 8-12 lessons across beginner → advanced, synthesised section guides, visuals, flashcards, a quiz, exercises, and on-demand deep dives per section. Grounded in the abstract, never invented.