Resistivity model for both paramagnetic and ferromagnetic phases
Andrew Das Arulsamy
Abstract
The resistivity, ρ as a function of temperature and ionization energy (doping) and magnetization respectively is derived with further confinements from spin-disorder scattering. The computed Tcrossover below TC and carrier density in Ga1-xMnxAs system are 8-12 K and 1019 cm-3, remarkably identical with the experimental values of 10-12 K and 1018-1020 cm-3 respectively.
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