Measurement of miniband parameters of a doped superlattice by photoluminescence in high magnetic fields
Abstract
We have studied a 50/50 superlattice of GaAs/Al0.21Ga0.79As composition, modulation-doped with Si, to produce n=1.4× 1012 cm-2 electrons per superlattice period. The modulation-doping was tailored to avoid the formation of Tamm states, and photoluminescence due to interband transitions from extended superlattice states was detected. By studying the effects of a quantizing magnetic field on the superlattice photoluminescence, the miniband energy width, the reduced effective mass of the electron-hole pair, and the band gap renormalization could be deduced.
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