Spin-splitting in the quantum Hall effect of disordered GaAs layers with strong overlap of the spin subbands
S. S. Murzin, M. Weiss, D. A. Knyazev, A. G. M. Jansen, K. Eberl
Abstract
With minima in the diagonal conductance Gxx and in the absolute value of the derivative |dGxy/dB| at the Hall conductance value Gxy=e2/h, spin-splitting is observed in the quantum Hall effect of heavily Si-doped GaAs layers with low electron mobility 2000 cm2/Vs in spite of the fact that the spin-splitting is much smaller than the level broadening. Experimental results can be explained in the frame of the scaling theory of the quantum Hall effect, applied independently to each of the two spin subbands.
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