Calculating the Curie Temperature reliably in diluted III-V ferromagnetic semiconductors
Georges Bouzerar, Timothy Ziman, Josef Kudrnovsky
Abstract
We present a semi-analytic theory for the Curie temperature in diluted magnetic semi-conductors that treats disorder effects exactly in the effective Heisenberg Hamiltonian, and spin fluctuations within a local RPA. The exchange couplings are taken from concentration dependent ab initio estimates. The theory gives very good agreement with published data for well-annealed samples of MnxGa1-xAs. We predict the critical temperatures for MnxGa1-xN lower than in doped GaAs, despite the stronger nearest-neighbour ferromagnetic coupling. We also predict the dependence on the hole concentration.
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