The Two-flux Composite Fermion Series of Fractional Quantum Hall States in Strained Si
K. Lai, W. Pan, D. C. Tsui, S. Lyon, M. Muhlberger, F. Schaffler
Abstract
Magnetotransport properties are investigated in a high-mobility two-dimensional electron system in the strained Si quantum well of a (100) Si0.75Ge0.25/Si/Si0.75Ge0.25 heterostructure, at temperatures down to 30mK and in magnetic fields up to 45T. We observe around ν=1/2 the two-flux composite fermion (CF) series of the fractional quantum Hall effect (FQHE) at ν=2/3, 3/5, 4/7, and at ν=4/9, 2/5, 1/3. Among these FQHE states, the ν=1/3, 4/7 and 4/9 states are seen for the first time in the Si/SiGe system. Interestingly, of the CF series, the 3/5 state is weaker than the nearby 4/7 state and the 3/7 state is conspicuously missing, resembling the observation in the integer quantum Hall effect regime that the ν=3 is weaker than the nearby ν=4 state. Our data indicate that the two-fold degeneracy of the CFs is lifted and an estimated valley splitting of ~1K.
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