Structural Trends Interpretation of the Metal-to-Semiconductor Transition in Deformed Carbon Nanotubes
Jun-Qiang Lu, Jian Wu, Wenhui Duan, Bing-Lin Gu, H. T. Johnson
Abstract
Two mechanisms that drive metal-to-semiconductor transitions in single-walled carbon nanotubes are theoretically analyzed through a simple tight-binding model. By considering simple structural trends, the results demonstrate that metal-to-semiconductor transitions can be induced more readily in metallic zigzag nanotubes than in armchair nanotubes. Furthermore, it is shown that both mechanisms have the effect of making the two originally equivalent sublattices physically distinguishable.
Create a lesson
Related papers
Composition-controlled optical fingerprints and anisotropy of self-trapped excitons in double perovskites
Simone Grillo, Offir Zachs Maishlos, Liya Koren et al.
Time-Resolved Phonon Dispersions of Thermally Excited Graphite at the Nanoscale
Mairi McCauley, Christoph T. Koch, Benedikt Haas
Direct growth of crystalline spinel GaON films: A wide-bandgap mixed-anion semiconductor
Baikui Li, Zecheng Yang, Wenhao Yin et al.
A Transferable Machine-Learned Potential Enabling Large-Scale Copper-Carbon Simulations from Equilibrium to Extreme Conditions
Feiyu Zhou, Wei Qiu, Yan Chen et al.
Imaging Gate-Tunable Single-Layer Molecular Kagome Lattices
Ziyi Wang, Rafal Zuzak, Weichen Tang et al.
Flexoelectricity and Flexomagnetism
Alexander Edström, Massimiliano Stengel