Zero-Resistance States Induced by Electromagnetic-Wave Excitation in GaAs/AlGaAs Heterostructures
R. G. Mani
Abstract
We report the detection of novel zero-resistance states induced by electromagnetic wave excitation in ultra high mobility GaAs/AlGaAs heterostructure devices, at low magnetic fields, B, in the large filling factor limit. Vanishing resistance is observed in the vicinity of B = [4/(4j+1)] Bf, where Bf = 2πfm*/e, where m* is the effective mass, e is the charge, and f is the microwave frequency. The dependence of the effect is reported as a function of f, the temperature, and the power.
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