Low-Temperature Hall Effect in Substituted Sr2RuO4
N. Kikugawa, A. P. Mackenzie, C. Bergemann, Y. Maeno
Abstract
We report the results of a study of the Hall effect and magnetoresistance in single crystals of Sr2RuO4 in which Sr(2+) has been substituted by La(3+) (Sr(2-y)La(y)RuO(4)) or Ru(4+) by Ti(4+) (Sr(2)Ru(1-x)Ti(x)O(4)). For undoped Sr2RuO4, the purity is so high that the strong-field Hall coefficient can be measured for fields above 4 T. The conventional weak-field Hall coefficient as a function of doping shows a sharp jump and sign change at y ~ 0.01 that is unrelated to either a sharp change in Fermi-surface topography or a magnetic instability. The implications of these results are discussed.
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